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PhD Position - project "Advanced UV for Life - UV Power"

Leibniz Institute for Crystal Growth (IKZ). Berlin, 19.04.2017

Leibniz-Institut für Kristallzüchtung
The Leibniz Institute for Crystal Growth (IKZ) performs basic and applied research in the fields of growth, characterization and processing of crystalline matter. It is part of Forschungsverbund Berlin e. V. and a member of the Leibniz Association. The IKZ is a leading research institution in the area of crystal growth of technologically important materials for micro-, opto- and powerelectonics, sensors, optics and laser technology. This ranges from explorative fundamental research to pre-industrial development. IKZ has excellent expertise and facilities for the characterization of low-dimensional systems in nanostructured III-V semiconductors. Among them an aberration corrected TEM/STEM, a Dualbeam FIB, an SEM equipped with cathodoluminescence and a computer cluster for performing STEM and molecular dynamics simulations.
IKZ invites applicants for a

PhD Position (m/f)

within the framework of the project “Advanced UV for Life - UV Power” (three-year grant by the BMBF within the programme “Zwanzig20 – Partnerschaft für Innovation“), starting as soon as possible.
Realizing high efficient and power light emitting diodes in the deep UV is the next challenge in the field of III-nitride technology. This requires epitaxial structures that reduce the dislocations by orders of magnitudes as well as an improvement of the active structure and new concepts for doping. Within the project the partners Ferdinand-Braun-Institut, OSRAM OS, and Technische Universität Berlin will study amongst others nano patterned sapphire substrates and high temperature annealing of sputtered buffer layers to reduce dislocation densities.
The thesis aims at a fundamental understanding of the defect processes during growth, of the chemistry and structure of the interfaces down to the atomic level. We are looking for a candidate performing structural analysis by high resolution transmission electron microscopy (TEM) of buffer layers and the active structure of the devices. The work comprises quantitative aberration corrected TEM and STEM, image simulation and modeling of growth and defect processes. In-situ TEM studies at atmospheric pressures and high temperatures are part of the work.
We are looking for a candidate with excellent knowledge of basic physics and of solid state physics. Expertise in highresolution transmission electron microscopy and image simulation would be an advantage. We are looking for a team player with a high level of communication skills and the assertiveness to work in a highly motivated team of researchers and technicians. Applicants must hold a diploma or an MSc degree in physics, crystallography, materials science or a related discipline. Furthermore, we expect good English language skills, scientific self-dependence, cooperativeness, and ability to work in a team.
For technical information please contact Dr. Martin Albrecht by phone (+49 30 6392 3094) or email:
The employment will be limited to three years, with the salary paid according to the TVöD (collective agreement for the public service). Among equally qualified applicants, preference will be given to disabled candidates. The IKZ is an equivalent opportunity employer and actively supports reconciliation of work and family life.
We await your informative application with reference to the job number 07/17, including the usual documents, by May 10th, 2017.
Please send them to Mrs. Birgit Ruthenberg:

Bewerbungsschluss: 10.05.2017