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PhD Position Physics, Materials Science, Chemistry

Leibniz-Institut für Kristallzüchtung (IKZ). Berlin, 20.09.2017

Leibniz-Institut für Kristallzüchtung
The Leibniz Institute for Crystal Growth (IKZ) performs basic and applied research in the fields of growth, characterization and processing of crystalline matter. It is part of Forschungsverbund Berlin e. V. and a member of the Leibniz Association. The IKZ is a leading research institution in the area of crystal growth of technologically important materials for micro-, opto- and power electronics, sensors, optics and laser technology. This ranges from explorative fundamental research to pre-industrial development.
IKZ invites applicants for a

PhD Position

(part-time)
available from December 1, 2017, on the topic:
„Generation and evolution of structural defects during AlN bulk crystal growth, substrate preparation, and AlGaN/AlN epitaxy“
As the white LED became a popular light source, research currently focuses on the preparation of UV LEDs for disinfection applications. Such devices are made of AlGaN and AlN epitaxial layers, which can be deposited on aluminium nitride (AlN) single crystal substrates. In order to prepare epitaxial layers of highest structural perfection, the density of structural defects (dislocations) on the substrate surface should be as low as possible.
At the IKZ AlN single crystals are prepared from the gas phase (PVT method) and subsequently cut and polished into substrates; the neighbouring research institute FBH provides epitaxy on these substrates.
Besides the participation in the growth of AlN bulk crystals, the task consists in exploring the structural properties of the crystals, substrates, and epitaxial layers. The defect structure is investigated by defect-selective wet chemical etching as well as by optical, X-ray, and electron microscopy analysis. The work is targeted on determination and characterization of the origins of defect formation, assessment of defect evolution along the process chain, and providing conception and evaluation of novel approaches in order to reduce the defect density during AlN crystal growth, substrate preparation, and epitaxy.
Applicants must hold a Diploma or an MSc degree in physics, materials science, chemistry or a related discipline. Furthermore, we expect good English language skills, scientific selfdependence, cooperativeness, and ability to work in a team.
For technical information please contact Dr. Jürgen Wollweber, Tel.: +49 30 6392 2843, e-mail: juergen.wollweber@ikz-berlin.de
The employment is limited and payment is according to TVöD (Treaty for German public service). Among equally qualified applicants, preference will be given to disabled candidates. The IKZ is an equivalent opportunity employer and actively supports reconciliation of work and family life.
We await your informative application with reference to the job number K09/17, including the usual documents, by October 15, 2017. Please send them to Mrs. Ruthenberg: personal@ikz-berlin.de

Bewerbungsschluss: 15.10.2017