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PhD Candidate Electrical Engineering, Physics
Nexperia Germany GmbH / Vienna University of Technology
When it comes to careers at Nexperia, Efficiency Wins.
We have a common belief that if you are on "Team Nexperia" you are here for a very good reason. Your
competence and ability are valued. Your skills and expertise are needed to make us successful. You are qualified
to be on our team.
We are currently looking for electrical engineers and physicists with the interest in semiconductor device physics and
characterization, modeling and electronics for a research which will be performed at the Vienna University of Technology
in the frame of a project contract. The research will contribute to the development of new ESD protection concepts and
will lead to the prospect of permanent employment at Nexperia Hamburg.
PhD Position: Experimental and simulation analysis of ESD Protection
devices in advanced silicon high-speed discrete technologies
DURATION: 3 YEARS WITH THE PROSPECT OF PERMANENT EMPLOYMENT at Nexperia Hamburg
LOCATION: VIENNA UNIVERSITY OF TECHNOLOGY
TARGET START DATE: IMMEDIATELY
REMUNERATION: APPROX. 2071 EURO GROSS/MONTH
During the manufacturing or operation of an integrated circuit (IC), the electronic devices are exposed to different
kind of disturbing electrical pulses including electrostatic discharges (ESD). In high-speed applications, e.g. USB 3,
the protection devices need to exhibit a low capacitance which contradicts the requirement for high ESD robustness.
With the technology down-scaling, the existing on-chip protection schemes are not efficient anymore due to the large
area consumption for the ESD protection device in the chip. Therefore off-chip ESD protection elements based on discrete
component technologies are necessary to fulfil the above requirements.
The topic of this PhD thesis is the experimental and simulation analysis of the internal behavior of advanced high-speed
Si discrete technology ESD protection devices. The PhD candidate will combine electrical and optical techniques to analyze
breakdown phenomena, self-heating effects and the current density distribution in the ESD protection devices during the
ESD pulses. The unique transient interferometric mapping technique developed at TU Vienna will be employed to measure
thermal and free-carrier response with ns time and µm space resolution during ESD pulse (Fig.1). The obtained experimental
data will be related to breakdown mechanisms, electrical triggering behavior and particular layout of ESD protection devices.
The candidate will also model device behavior using TCAD simulation (Fig.2). The goal of the experimental and simulation
analysis is to understand the device physics and thus to optimize the studied structures for high ESD robustness. The
work will be published in scientific journals and conferences.
Master’s degree in Electrical Engineering, Physics or similar
Basic knowledge of semiconductor device physics
Proficiency in English
At Nexperia, efficiency wins through:
Our commitment and strength,
belief in our goals, our drive to succeed
Our attitude to obstacles, agility with purpose,
our ability to innovate through challenges
Our expertise and integrity, respect of people
and resources, our fairness and transparency
Our forward momentum, teamwork in products
and people, our proof through results